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| SMD Type Transistors IC NPN Epitaxial Planar Silicon Transistor 2SC4695 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Adoption of FBET process. +0.1 2.4-0.1 High DC current gain. High VEBO (VEBO 25V). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 High reverse hFE (150 typ). Small ON resistance [Ron=1W (IB=5mA)]. +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 50 20 25 500 800 100 250 150 -55 to +150 Unit V V V mA mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type 2SC4695 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 40V, IE=0 VEB = 20V, IC=0 VCE = 5V , IC = 10mA VCE = 10V , IC = 10mA VCB = 10V , f = 1.0MHz Transistors IC Min Typ Max 0.1 0.1 Unit iA iA 300 250 3.6 0.12 0.85 50 20 25 135 1200 MHz pF 0.5 1.2 V V V V V ns VCE(sat) IC = 100mA , IB = 2mA VBE(sat) IC = 100mV , IB = 2mA V(BR)CBO IC = 10iA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10iA , IC = 0 ton Storage time tstg 450 ns Fall time tf 100 ns Marking Marking WT 2 www.kexin.com.cn |
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